onsemi FDS2672
This single N−Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.| Part No. | FDS2672 |
|---|---|
| Datasheet | FDS2672 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A● Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A
● Fast Switching Speed
● High Performance Trench Technology for Extremely Low RDS(on)
● These Device is Pb−Free, Halide Free and are RoHS Compliant
APPLICATIONS
● DC−DC ConversionABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed 200 V ±20 V 3.9 A 50 EAS Single Pulse Avalanche Energy (Note 3) 37.5 mJ PD Power Dissipation (Note 1a) (Note 1b) 2.5 W 1.0 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 _C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction−to−Case (Note 1) RθJ...
