FDS2672 - N-Channel MOSFET

onsemi

General Description

This single N Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A.
Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(on).
These Device is Pb.
Free, Halide Free and are RoHS Compliant.

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FDS2672 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS2672
Manufacturer	onsemi
File Size	301.73 KB
Description	N-Channel MOSFET
Datasheet	FDS2672 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UltraFET Trench 200 V, 3.9 A, 70 mW FDS2672 General Description This single N−Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A • Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • These Device is Pb−Free, Halide Free and are RoHS Compliant Applications • DC−DC Conversion ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed 200 V ±20 V 3.