Datasheet Summary
MOSFET
- N-Channel, UltraFET Trench
200 V, 3.9 A, 70 mW
General Description This single N- Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A
- Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- These Device is Pb- Free, Halide Free and are RoHS pliant
Applications
- DC- DC...
