FDS3572 Datasheet - ON Semiconductor

N-Channel MOSFET

* RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A

* Qg(tot) = 31 nC (Typ.), VGS = 10 V

* Low Miller Charge

* Low QRR Body Diode

* Optimized Efficiency at High Frequencies

* UIS Capability (Single Pulse and Repetitive Pulse)

* This Device is Pb

FDS3572

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N-channel mosfet.

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FDS3572 N-Channel MOSFET ON Semiconductor

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