Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
1.8 V Specified
FDS4465, FDS4465-G
Description This P- Channel 1.8 V specified MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V- 8 V).
Features
- - 13.5 A,
- 20 V
- RDS(on) = 8.5 mΩ @ VGS =
- 4.5 V
- RDS(on) = 10.5 mΩ @ VGS =
- 2.5 V
- RDS(on) = 14 mΩ @ VGS =
- 1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- High Current and Power Handling Capability
Applications
- Power Management
- Load Switch
- Battery Protection
Specifications...
