Datasheet Summary
MOSFET
- Dual, P-Channel, POWERTRENCH
30 V
General Description This P- Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V
- 20 V).
Features
- - 7 A,
- 30 V. RDS(ON) = 23 mW @ VGS =
- 10 V
RDS(ON) = 35 mW @ VGS =
- 4.5 V
- Low Gate Charge (15 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This is a Pb- Free Device
Features
- Power Management
- Load Switch
- Battery...
