Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
60 V
General Description This N- Channel MOSFET is produced using onsemi’s advanced
PowerTrench process that has been especially tailored to minimize on- state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in- line power loss and fast switching are required.
Features
- S A,
- 60 V.
RDS(ON) = 0.020 mW @ VGS = 10 V
RDS(ON) = 0.025 mW @ VGS = 6 V
- Low Gate Charge (30 nC typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- These Device is Pb- Free and Halide...
