FDS6570A
Overview
This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
- 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V.
- Low gate charge (47nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
