FDS6676AS-G Datasheet - ON Semiconductor

N-Channel MOSFET

FDS6676AS-G Features

* 14.5 A, 30 V

* RDS(ON) Max = 6.0 mW at VGS = 10 V

* RDS(ON) Max = 7.25 mW at VGS = 4.5 V

* Includes SyncFET Schottky Body Diode

* Low Gate Charge (45 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching

FDS6676AS-G General Description

The FDS6676AS is designed to replace a single SO *8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using onsem.

FDS6676AS-G Datasheet (263.76 KB)