Datasheet Summary
SyncFETt
- N-Channel, POWERTRENCH)
30 V
FDS6676AS, FDS6676AS-G
General Description The FDS6676AS is designed to replace a single SO- 8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.
Features
- 14.5 A, 30 V
- RDS(ON) Max = 6.0 mW at VGS = 10 V
- RDS(ON) Max = 7.25 mW at VGS = 4.5 V
- Includes SyncFET Schottky Body Diode
- Low Gate Charge (45 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching
- High Power and Current Handling...
