Datasheet Summary
FDS6679AZ P-Channel PowerTrench® MOSFET
FDS6679AZ P-Channel PowerTrench® MOSFET
-30V, -13A, 9mΩ
General Description
This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
- Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 6kV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High...
