FDS6900AS-G mosfet equivalent, dual n-channel mosfet.
* Q2: Optimized to Minimize Conduction Losses Includes SyncFET
Schottky Body Diode, 8.2 A, 30 V
* RDS(on) = 22 mW at VGS = 10 V
* RDS(on) = 28 mW at VGS = 4.5.
The FDS6900AS is designed to replace two single SO−8 MOSFETs
and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two u.
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