FDS6900AS-G - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDS6900AS-G
Manufacturer	ON Semiconductor
File Size	315.10 KB
Description	Dual N-Channel MOSFET
Datasheet	FDS6900AS-G Datasheet
Note	This datasheet PDF includes multiple part numbers: FDS6900AS-G, FDS6900AS. Please refer to the document for exact specifications by model.
Additional preview pages of the FDS6900AS-G datasheet.

Product details

Description

The FDS6900AS is designed to replace two single SO 8 MOSFETs and Schottky diode in synchronous dc dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside swit

Features

Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V.
RDS(on) = 22 mW at VGS = 10 V.
RDS(on) = 28 mW at VGS = 4.5 V.
Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V.
RDS(on) = 27 mW at VGS = 10 V.
RDS(on) = 34 mW at VGS = 4.5 V.
100% RG (Gate Resistance) Tested.
These Devices are Pb.
Free and are RoHS Compliant Specifications.

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Published: Dec 25, 2023 |