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FDS6900AS Datasheet Dual N-Channel MOSFET

Manufacturer: onsemi

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General Description

The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.

FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency.

The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses.

Overview

DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, POWERTRENCH), SyncFETt FDS6900AS, FDS6900AS-G.

Key Features

  • Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V.
  • RDS(on) = 22 mW at VGS = 10 V.
  • RDS(on) = 28 mW at VGS = 4.5 V.
  • Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V.
  • RDS(on) = 27 mW at VGS = 10 V.
  • RDS(on) = 34 mW at VGS = 4.5 V.
  • 100% RG (Gate Resistance) Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant Specifications.

📁 Similar Datasheet

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Fairchild Semiconductor Logo FDS6900AS Dual N-Ch PowerTrench SyncFET Fairchild Semiconductor
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