Datasheet Summary
FDS86141 N-Channel Power Trench® MOSFET
.onsemi.
N-Channel Power Trench® MOSFET
100 V, 7 A, 23 mΩ
Features
General Description
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
- High performance trench technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Applications
- DC-DC Conversion
SO-8
Pin 1
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise...
