Datasheet Details
| Part number | FDS86240 |
|---|---|
| Manufacturer | onsemi |
| File Size | 328.85 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDS86240 Datasheet
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| Part number | FDS86240 |
|---|---|
| Manufacturer | onsemi |
| File Size | 328.85 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDS86240 Datasheet
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Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Applications DC/DC Converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24 V and 48 V Systems High Voltage Synchronous Rectifier D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDS86240 | MOSFET | Fairchild Semiconductor |
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