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FDS86240 - N-Channel MOSFET

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Description

Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Sur

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Datasheet Details

Part number FDS86240
Manufacturer ON Semiconductor
File Size 328.85 KB
Description N-Channel MOSFET
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FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A „ Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A „ High Performance Trench Technology for Extremely Low rDS(on) „ High Power and Current Handling Capability in a Widely Used Surface Mount Package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
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