FDS86240 Description
Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates...
FDS86240 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A
- Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability in a Widely Used
- 100% UIL Tested
- RoHS pliant