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FDS8880 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

DC/DC converters Bra

Key Features

  • rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A.
  • rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A.
  • High performance trench technology for extremely low rDS(on).
  • Low gate charge.
  • High power and current handling capability.
  • RoHS Compliant General.

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Datasheet Details

Part number FDS8880
Manufacturer onsemi
File Size 564.16 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8880 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS8880 N-Channel PowerTrench® MOSFET FDS8880 N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ Features „ rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A „ rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A „ High performance trench technology for extremely low rDS(on) „ Low gate charge „ High power and current handling capability „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications „ DC/DC converters Branding Dash 5 1 2 3 4 SO-8 5 4 6 3 7 2 8 1 ©2007 Semiconductor Components Industries, LLC. 1 October-2017, Rev.