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FDS8880 Datasheet

N-Channel MOSFET

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FDS8880
N-Channel PowerTrench® MOSFET
30V, 11.6A, 10m
Features
„ rDS(on) = 10m, VGS = 10V, ID = 11.6A
„ rDS(on) = 12m, VGS = 4.5V, ID = 10.7A
„ High performance trench technology for extremely low
rDS(on)
„ Low gate charge
„ High power and current handling capability
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Applications
„ DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2007 Semiconductor Components Industries, LLC.
1
October-2017, Rev. 2
Publication Order Number:
FDS8880/D


  ON Semiconductor Electronic Components Datasheet  

FDS8880 Datasheet

N-Channel MOSFET

No Preview Available !

MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2b)
Package Marking and Ordering Information
Device Marking
FDS8880
Device
FDS8880
Package
SO-8
Reel Size
330mm
Ratings
30
±20
11.6
10.7
83
82
2.5
20
-55 to 150
25
50
125
Units
V
V
A
A
A
mJ
W
mW/oC
oC
oC/W
oC/W
oC/W
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
30
VDS = 24V
VGS = 0V
-
TJ = 150oC -
VGS = ±20V
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.2
ID = 11.6A, VGS = 10V
-
rDS(on)
Drain to Source On Resistance
ID = 10.7A, VGS = 4.5V
ID = 11.6A, VGS = 10V,
TJ = 150oC
-
-
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
-
VDS = 15V, VGS = 0V,
f = 1MHz
-
-
VGS = 0.5V, f = 1MHz
0.6
VGS = 0V to 10V
-
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 11.6A
Ig = 1.0mA
-
-
-
-
-
Typ
-
-
-
-
-
7.9
9.6
12.5
1235
260
150
2.5
23
12
1.3
3.3
2.0
4.2
Max Units
-
V
1
µA
250
±100 nA
2.5
V
10.0
12.0 m
16.3
-
pF
-
pF
-
pF
4.3
30
nC
16
nC
1.6
nC
-
nC
-
nC
-
nC
www.onsemi.com
2


Part Number FDS8880
Description N-Channel MOSFET
Maker ON Semiconductor
PDF Download

FDS8880 Datasheet PDF






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