FDS8880 Datasheet | onsemi

FDS8880 N-Channel Power Trench® MOSFET FDS8880 N-Channel Power Trench® MOSFET 30V, 11.6A, 10mΩ Features - r DS(on) = 10mΩ, VGS = 10V, ID = 11.6A - r DS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A - High performance trench technology for extremely low r DS(on) - Low gate charge - High power and current handling capability - Ro HS pliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Applications - DC/DC converters Branding Dash 5 1 2 3 4 SO-8 ©2007 Semiconductor ponents Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDS8880/D FDS8880 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25o C, VGS = 10V, RθJA = 50o C/W) Continuous (TA = 25o C, VGS = 4.5V, RθJA = 50o C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power...