Datasheet Summary
DATA SHEET .onsemi.
Transistor, N-Channel, Field Effect, Enhancement Mode, 2.5 V Specified
General Description This N- Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook puter power management, battery powered circuits, and DC motor control.
Features
- 6.3 A, 30 V
RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V
- Fast switching speed.
- High power and current...
