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FDT86106LZ Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, POWERTRENCH) 100 V, 3.2 A, 108 mW FDT86106LZ General.

General Description

This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance.

G−S zener has been added to enhance ESD voltage level.

Key Features

  • Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A.
  • Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • HBM ESD Protection Level > 3 kV Typical (Note 4).
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

Similar Datasheet

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