FDT86106LZ mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A
* Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(.
* DC − DC Conversion
MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VD.
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