Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
100 V, 3.2 A, 108 mW
General Description This N- Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on- state resistance and yet maintain superior switching performance. G- S zener has been added to enhance ESD voltage level.
Features
- Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A
- Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- HBM ESD Protection Level > 3 kV Typical (Note 4)
- 100% UIL Tested
- This Device is Pb- Free,...
