FDT86113LZ mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(.
* DC − DC Switch
Specifications
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rati.
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