FDT86244 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel Shielded Gate POWERTRENCH) 150 V, 2.8 A, 128 mW FDT86244 .
This N. Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDT86244
Manufacturer: ON Semiconductor ↗
File Size: 244.67 KB
Datasheet: FDT86244-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A
* Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surf

Applications

* Load Switch
* Primary Switch MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous TA = 25°C (Note 1a) 150 V 20 V 2.8 A
* Pulsed 12 EAS S

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FDT86244 N-Channel MOSFET ON Semiconductor

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