* Shielded Gate MOSFET Technology
* Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A
* Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A
* High Performance Tren.

* Load Switch
* Primary Switch MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Rati.

This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness. Features
* Shielded Gate MOSFET .

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