FDT86244 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2.8 A, 128.

Datasheet Details

This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for RDS(on), switching performance and ruggedness.

Shielded Gate MOSFET Technology.
Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A.
Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant Typical.

Brand Logo	Part Number	Description	Manufacturer
	FDT86244	MOSFET	Fairchild Semiconductor
	FDT86244	N-Channel Enhancement MOSFET	Kexin