Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
150 V, 2 A, 228 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Features
- Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A
- Max rDS(on) = 280 mW at VGS = 4.5 V, ID = 1.8 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a widely used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- These Devices are Pb- Free and are RoHS pliant
Applications
- Load Switch
- Primary Switch
- Buck/Boost Switch
Specifications
MOSFET MAXIMUM RATINGS (TA = 25C...
