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  ON Semiconductor Electronic Components Datasheet  

FFSB0665B Datasheet

Silicon Carbide Schottky Diode

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FFSB0665B
Silicon Carbide Schottky
Diode
650 V, 6 A
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 24.5 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (TJ = 25°C,
IL(pk) = 9.9 A, L = 0.5 mH, V = 50 V)
VRRM
EAS
650 V
24.5 mJ
Continuous Rectified Forward
Current
NonRepetitive Peak Forward
Surge Current
@ TC < 150
@ TC < 135
TC = 25°C
tP = 10 ms
IF
IFM
6.0 A
8.0
523 A
TC = 150°C
tP = 10 ms
467
NonRepetitive Forward Surge
Current (HalfSine Pulse)
TC = 25°C
tP = 8.3 ms
IFSM
45 A
Power Dissipation
TC = 25°C
TC = 150°C
Operating Junction and Storage Temperature
Range
Ptot
TJ, Tstg
61
10
55 to
+175
W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Parameter
Symbol Value Unit
Thermal Resistance, JunctiontoCase, Max. RqJC
2.46 °C/W
www.onsemi.com
VRRM
650 V
IF
6.0 A
1., 3. Cathode 2. Anode
Schottky Diode
3
1
2
D2PAK3
TO263
CASE 418BK
MARKING DIAGRAM
&Z&3&K
FFSB
0665B
&Z
&3
&K
FFSB0665B
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
August, 2019 Rev. 0
1
Publication Order Number:
FFSB0665B/D


  ON Semiconductor Electronic Components Datasheet  

FFSB0665B Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

FFSB0665B
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON CHARACTERISTICS
Forward Voltage
VF
Reverse Current
IR
CHARGES, CAPACITANCES & GATE RESISTANCE
IF = 6.0 A, TJ = 25°C
IF = 6.0 A, TJ = 125°C
IF = 6.0 A, TJ = 175°C
VR = 650 V, TJ = 25°C
VR = 650 V, TJ = 125°C
VR = 650 V, TJ = 175°C
1.38 1.7
1.53 2.0
1.67 2.4
0.5 40
1.0 80
2.0 160
V
mA
Total Capacitive Charge
QC
VC = 400 V
16 nC
Ctot VR = 1 V, f = 100 kHz
259 pF
VR = 200 V, f = 100 kHz
29
VR = 400 V, f = 100 kHz
22
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package Packing Method Reel Size
Tape Width
Quantity
FFSB0665B
FFSB0665B
D2PAK
Tape & Reel
330 mm
24 mm
800 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Part Number FFSB0665B
Description Silicon Carbide Schottky Diode
Maker ON Semiconductor
Total Page 6 Pages
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