Datasheet Details
| Part number | FFSB10120A |
|---|---|
| Manufacturer | onsemi |
| File Size | 180.08 KB |
| Description | Silicon Carbide Schottky Diode |
| Datasheet | FFSB10120A-ONSemiconductor.pdf |
|
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Overview: FFSB10120A Silicon Carbide Schottky Diode 1200 V, 10 A.
| Part number | FFSB10120A |
|---|---|
| Manufacturer | onsemi |
| File Size | 180.08 KB |
| Description | Silicon Carbide Schottky Diode |
| Datasheet | FFSB10120A-ONSemiconductor.pdf |
|
|
|
Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
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