FFSB10120A - Silicon Carbide Schottky Diode

onsemi

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

Max Junction Temperature 175°C.
Avalanche Rated 100 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery / No Forward Recovery.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

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FFSB10120A silicon carbide schottky diode by onsemi - Datasheet Preview

Datasheet Details

Part number	FFSB10120A
Manufacturer	onsemi
File Size	180.08 KB
Description	Silicon Carbide Schottky Diode
Datasheet	FFSB10120A Datasheet

📁 Similar Datasheet

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FFSM0465A	SiC Schottky Diode	onsemi
FFSP3065A	Silicon Carbide Schottky Diode	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FFSB10120A-F085	Silicon Carbide Schottky Diode
FFSB1065B-F085	Silicon Carbide Schottky Diode
FFSB0665A	SiC Schottky Diode
FFSB0665B	SiC Schottky Diode
FFSB0665B-F085	Silicon Carbide Schottky Diode

Full PDF Text Transcription (Reference)

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FFSB10120A Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.