FFSB0665B Description
Silicon Carbide (SiC) Schottky Diode EliteSiC, 6 A, 650 V, D2, D2PAK-2L FFSB0665B Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor....
FFSB0665B Key Features
- Max Junction Temperature 175C
- Avalanche Rated 24.5 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS