FFSB0865B Datasheet | onsemi

Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features - Max Junction Temperature 175°C - Avalanche Rated 33 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery / No Forward Recovery - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Applications - General Purpose - SMPS, Solar Inverter, UPS - Power Switching Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 m H, V = 50 V) VRRM EAS 650 V 33 m J Continuous Rectified Forward Current Non- Repetitive Peak Forward Surge Current @ TC < 147 @ TC < 135 TC = 25°C t P = 10 ms IF IFM 8.0 A 10.1 577 A TC = 150°C t P = 10 ms Non- Repetitive Forward Surge Current (Half- Sine Pulse) TC = 25°C t P = 8.3...