FFSB10120A-F085
FFSB10120A-F085 is Silicon Carbide Schottky Diode manufactured by onsemi.
Silicon Carbide Schottky Diode
1200 V, 10 A
Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
- Max Junction Temperature 175°C
- Avalanche Rated 100 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC- Q101 qualified
Applications
- Automotive HEV- EV Onboard Chargers
- Automotive HEV- EV DC- DC Converters
.onsemi.
1.,3. Cathode 2. Anode Schottky Diode
3 1
2 D2PAK2 (TO- 263- 2L)
CASE 418BK MARKING DIAGRAM
$Y&Z&3&K FFSB 10120A
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
FFSB10120A = Specific Device Code
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