* Max Junction Temperature 175°C
* Avalanche Rated 33 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Fr
FFSB0865B Datasheet (248.33 KB)
FFSB0865B
248.33 KB
Silicon carbide schottky diode.
FFSB0865B Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior s.
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