FFSH20120A diode equivalent, silicon carbide schottky diode.
* Max Junction Temperature 175°C
* Avalanche Rated 200 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.
* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits
DATA SHEET www.onsemi.com
1. Catho.
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