FFSH20120A Datasheet, Diode, ON Semiconductor

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FFSH20120A Datasheet

FFSH20120A Features and benefits

* Max Junction Temperature 175°C
* Avalanche Rated 200 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.

FFSH20120A Application

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www.onsemi.com 1. Catho.

FFSH20120A Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

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