FFSH20120A Datasheet | onsemi

Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features - Max Junction Temperature 175°C - Avalanche Rated 200 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery/No Forward Recovery - This Device is Pb- Free, Halogen Free/BFR Free and Ro HS pliant Applications - General Purpose - SMPS, Solar Inverter, UPS - Power Switching Circuits DATA SHEET .onsemi. 1. Cathode 2. Anode Schottky Diode 1 2 TO- 247- 2LD CASE 340CL MARKING DIAGRAM AYWWZZ FFSH 20120A A YWW ZZ FFSH20120A = Assembly Plant Code = Date Code (Year & Week) = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2017 January, 2023 - Rev. 3 Publication Order Number: FFSH20120A/D ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (Note 1) 200 m J Continuous Rectified Forward Current @ TC <...