FFSM0865A Datasheet - ON Semiconductor

SiC Schottky Diode

FFSM0865A Features

* Max Junction Temperature 175°C

* Avalanche Rated 37 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* This Device is Pb

* Free, Halogen Free/BFR Free an

FFSM0865A General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSM0865A Datasheet (392.20 KB)