FFSM0865B
FFSM0865B is SiC Schottky Diode manufactured by onsemi.
ures
- Max Junction Temperature 175°C
- Avalanche Rated 33 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
Applications
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM
Single Pulse Avalanche Energy (starting TC =
25°C, IL(pk) = 11.5 A, L = 0.5 m H, V = 50 V)
33 m J
Continuous Rectified Forward
TC < 153
Current
TC < 135
Non- Repetitive Peak Forward
TC = 25°C
Surge Current (t P = 10 ms)
TC = 150°C
Non- Repetitive Forward Surge Current (Half- Sine Pulse)
TC = 25°C t P = 8.3...
