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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, Power88
FFSM0665B
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
• Max Junction Temperature 175°C • Avalanche Rated 24.
FFSM0665B Datasheet
