FFSM0865A
FFSM0865A is SiC Schottky Diode manufactured by onsemi.
Description
Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
- Max Junction Temperature 175°C
- Avalanche Rated 37 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- This Device is Pb- Free, Halogen Free/BFR Free and Ro HS pliant
Applications
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
DATA SHEET .onsemi.
Pin1
4 321
PQFN 8y8, 2P (Power88)
CASE 483AP
5. Cathode 3, 4. Anode 1, 2. Floating
Schottky Diode
MARKING DIAGRAM
AYWWKK FFSM 0865A
A YWW KK FFSM0865A
= Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor ponents Industries, LLC, 2017
February, 2023
- Rev. 4
Publication Order Number: FFSM0865A/D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse...
