* Max Junction Temperature 175°C
* Avalanche Rated 33 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Fr
FFSM0865B Datasheet (386.39 KB)
FFSM0865B
386.39 KB
Sic schottky diode.
Silicon Carbide (SiC) Schottky Diode EliteSiC, 8 A, 650 V, D2, Power88 FFSM0865B Silicon Carbide (SiC) Schottky Diodes use a completely ne.
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