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FFSP2065BDN-F085 Datasheet - ON Semiconductor

Silicon Carbide Schottky Diode

FFSP2065BDN-F085 Features

* Max Junction Temperature 175°C

* Avalanche Rated 49 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* AEC

* Q101 Qualified

* These Devices are P

FFSP2065BDN-F085 General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSP2065BDN-F085 Datasheet (296.73 KB)

Preview of FFSP2065BDN-F085 PDF

Datasheet Details

Part number:

FFSP2065BDN-F085

Manufacturer:

ON Semiconductor ↗

File Size:

296.73 KB

Description:

Silicon carbide schottky diode.

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FFSP2065BDN-F085 Silicon Carbide Schottky Diode ON Semiconductor

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