FFSP2065B Overview
Silicon Carbide (SiC) Schottky Diode EliteSiC, 20 A, 650 V, D2, TO-220-2L FFSP2065B Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor....
FFSP2065B Key Features
- Max Junction Temperature 175C
- Avalanche Rated 94 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS