Download the FGA25N120ANTDTU-F109 datasheet PDF.
This datasheet also covers the FGA25N120 variant, as both devices belong to the same npt trench igbt family and are provided as variant models within a single manufacturer datasheet.
Description
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features
- NPT Trench Technology, Positive Temperature Coefficient.
- Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C.
- Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25°C.
- Extremely Enhanced Avalanche Capability.