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FGA25N120ANTDTU-F109 - NPT Trench IGBT

Download the FGA25N120ANTDTU-F109 datasheet PDF. This datasheet also covers the FGA25N120 variant, as both devices belong to the same npt trench igbt family and are provided as variant models within a single manufacturer datasheet.

Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • NPT Trench Technology, Positive Temperature Coefficient.
  • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C.
  • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C.
  • Extremely Enhanced Avalanche Capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FGA25N120-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.
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