FGAF40S65AQ - IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	FGAF40S65AQ
Manufacturer	ON Semiconductor
File Size	486.38 KB
Description	IGBT
Datasheet	FGAF40S65AQ Datasheet
Additional preview pages of the FGAF40S65AQ datasheet.

Product details

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential.

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 40 A.
100% of the Parts Tested for ILM (Note 1).
High Input Impedance.
Fast Switching.
Tighten Parameter Distribution.
IGBT with Monolithic Reverse Conducting Diode.
This Device is Pb.
Free and is RoHS Complia.

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Published: Oct 3, 2022 |