FGD3N60LSD Overview
Key Specifications
Package: DPAK
Mount Type: Surface Mount
Pins: 3
Height: 2.517 mm
Description
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature.
Key Features
- High Current Capability
- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
- High Input Impedance
