FGH40T65SHDF
Description
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation.
Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co
- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.45 V(Typ.) @ IC = 40 A
Applications
- Induction Heating, MWO
