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FGH40T65SHDF - IGBT

General Description

series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating and MWO.

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.45 V(Typ. ) @ IC = 40 A.
  • 100% of the Parts Tested for ILM (Note 1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V(Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Induction Heating, MWO www.onsemi.