FGH40T65SPD-F085 Datasheet - ON Semiconductor

IGBT

FGH40T65SPD-F085 Features

* Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A

* 100% Of The Part Are Dynamically Tested (Note 1)

* Short Circuit Ruggedness > 5 mS @ 25°C

* Maximum Junction Temperature: TJ = 175°C

* Fast Switching

* Tight Parameter Distribution

FGH40T65SPD-F085 General Description

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD *F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching r.

FGH40T65SPD-F085 Datasheet (3.05 MB)