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  ON Semiconductor Electronic Components Datasheet  

FGH60N60 Datasheet

IGBT

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IGBT - Field Stop
600 V, 60 A
FGH60N60SMD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
Features
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Coefficient for easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
High Input Impedance
Fast Switching: EOFF = 7.5 uJ/A
Tightened Parameter Distribution
This Device is PbFree and is RoHS Compliant
Applications
Solar Inverter, UPS, Welder, PFC, Telecom, ESS
www.onsemi.com
VCES
600 V
IC
60 A
C
G
E
E
C
G
COLLECTOR
(FLANGE)
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH60N60
SMD
© Semiconductor Components Industries, LLC, 2010
January, 2020 Rev. 3
$Y
&Z
&3
&K
FGH60N60SMD
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FGH60N60SMD/D


  ON Semiconductor Electronic Components Datasheet  

FGH60N60 Datasheet

IGBT

No Preview Available !

FGH60N60SMD
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
600
V
±20
V
±30
V
IC
Collector Current
TC = 25°C
120
A
TC = 100°C
60
A
ICM (Note 1) Pulsed Collector Current
180
A
IF
Diode Forward Current
TC = 25°C
60
A
TC = 100°C
30
A
IFM (Note 1) Pulsed Diode Maximum Forward Current
180
A
PD
Maximum Power Dissipation
TC = 25°C
600
W
TC = 100°C
300
W
TJ
Operating Junction Temperature
55 to +175
°C
TSTG
Storage Temperature Range
55 to +175
°C
TL
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC (IGBT)
RqJC (Diode)
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.25
1.1
40
Unit
_C/W
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FGH60N60SMD
Top Mark
FGH60N60SMD
Package
TO247
Packing
Method
Tube
Reel Size
N/A
Tape Width
N/A
Qty per
Tube
30
www.onsemi.com
2


Part Number FGH60N60
Description IGBT
Maker ON Semiconductor
PDF Download

FGH60N60 Datasheet PDF






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