FGH60N60
FGH60N60 is IGBT manufactured by onsemi.
- Part of the FGH60N60SMD comparator family.
- Part of the FGH60N60SMD comparator family.
Description
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
- High Input Impedance
- Fast Switching: EOFF = 7.5 u J/A
- Tightened Parameter Distribution
- This Device is Pb- Free and is Ro HS pliant
Applications
- Solar Inverter, UPS, Welder, PFC, Tele, ESS
.onsemi.
VCES 600 V
IC 60 A
COLLECTOR (FLANGE)
TO- 247- 3LD CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K FGH60N60 SMD
© Semiconductor ponents Industries, LLC, 2010
January, 2020
- Rev. 3
$Y &Z &3 &K FGH60N60SMD
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number:
FGH60N60SMD/D
FGH60N60SMD
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
VCES VGES
Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter...
