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FGH60N60 - IGBT

This page provides the datasheet information for the FGH60N60, a member of the FGH60N60SMD IGBT family.

Datasheet Summary

Description

series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ. ) @ IC = 60 A.
  • High Input Impedance.
  • Fast Switching: EOFF = 7.5 uJ/A.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet preview – FGH60N60

Datasheet Details

Part number FGH60N60
Manufacturer ON Semiconductor
File Size 481.22 KB
Description IGBT
Datasheet download datasheet FGH60N60 Datasheet
Additional preview pages of the FGH60N60 datasheet.

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Full PDF Text Transcription

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A • High Input Impedance • Fast Switching: EOFF = 7.5 uJ/A • Tightened Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Telecom, ESS www.onsemi.
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