FGH60N60SF
Description
Ratings Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate-to-Emitter Voltage 600 V ±20 V ±30 V IC Collector Current TC = 25°C 120 A TC = 100°C 60 A ICM (Note 1) Pulsed Collector Current TC = 25°C 180 A PD Maximum Power Dissipation TC = 25°C 378 W TC = 100°C 151 W TJ Operating Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings.
Key Features
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 60 A
- High Input Impedance
- Fast Switching
- This Device is Pb-Free and is RoHS Compliant
