FGHL40T120RWD
FGHL40T120RWD is IGBT manufactured by onsemi.
Description
Using the novel field stop 7th generation IGBT technology and the
Gen7 Diode in TO247 3- lead package, FGHL40T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high- power switch.
Features
- Low Conduction Loss and Optimized Switching
- Maximum Junction Temperature
- TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- 100% of the Parts are Dynamically Tested
- Short Circuit Rated
- Ro HS pliant
Applications
- Motor Control
- UPS
- General Application Requiring High Power Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector- to- Emitter Voltage Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
VCES
VGES
±20
±30
Collector Current
TC = 25°C (Note 1)
TC = 100°C
Power Dissipation
TC = 25°C
600 W
TC = 100°C
Pulsed Collector Current
TC = 25°C (Note 2),
ICM tp = 10...
