FGHL50T65LQDT Description
Field Stop Trench IGBT 50 A, 650 V FGHL50T65LQDT Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copak Diode technology.
FGHL50T65LQDT Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 50 A
- 100% of the Parts are Tested for ILM (Note 2)
- Smooth and Optimized Switching
- Tight Parameter Distribution
- Co-packed with Soft and Fast Recovery Diode
- These Devices are Pb-Free and are RoHS pliant