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FGHL50T65LQDT - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ. ) @ IC = 50 A.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Smooth and Optimized Switching.
  • Tight Parameter Distribution.
  • Co.
  • packed with Soft and Fast Recovery Diode.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Field Stop Trench IGBT 50 A, 650 V FGHL50T65LQDT Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.