FGHL50T65MQDT
FGHL50T65MQDT is IGBT manufactured by onsemi.
Field Stop Trench IGBT
650 V, 50 A
Field stop 4th generation mid speed IGBT technology copacked with full rated current diode.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A
- 100% of the Parts are Tested for ILM (Note 2)
- Smooth and Optimized Switching
- Tight Parameter Distribution
- RoHS pliant
Typical Applications
- Solar Inverter
- UPS, ESS
- PFC, Converters
MAXIMUM RATINGS
Parameter
Symbol Value Unit
Collector to Emitter Voltage
Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES 650
VGES...
