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FGHL50T65SQDT - IGBT

Key Features

  • Maximum Junction Temperature : TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.47 V (Typ. ) @ IC = 50 A.
  • 100% of the Parts tested for ILM(1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop, Trench 650 V, 50 A Product Preview FGHL50T65SQDT Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.47 V (Typ.) @ IC = 50 A • 100% of the Parts tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Typical Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC Table 1.