* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 50 A
* 100% of the Parts are Tested for ILM (Note 2)
FGHL50T65LQDT Datasheet (209.85 KB)
FGHL50T65LQDT
209.85 KB
Igbt.
Field Stop Trench IGBT 50 A, 650 V FGHL50T65LQDT Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copak Diode technolog.
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