• Part: FGHL50T65MQDT
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 354.08 KB
Download FGHL50T65MQDT Datasheet PDF
onsemi
FGHL50T65MQDT
Features - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co- efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A - 100% of the Parts are Tested for ILM (Note 2) - Smooth and Optimized Switching - Tight Parameter Distribution - Ro HS pliant Typical Applications - Solar Inverter - UPS, ESS - PFC, Converters MAXIMUM RATINGS Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 VGES ±20 ±30 Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Pulsed Collector Current (Note 2) Pulsed Collector Current (Note 3) Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C @ TC = 100°C Operating Junction and Storage Temperature...