FGHL50T65MQDTL4 - IGBT

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ. ) @ IC = 50 A.
100% of the Parts are Tested for ILM (Note 2).
Smooth and Optimized Switching.
Tight Parameter Distribution.
RoHS Compliant Typical.

onsemi

Datasheet Details

Part number	FGHL50T65MQDTL4
Manufacturer	onsemi
File Size	346.78 KB
Description	IGBT
Datasheet	FGHL50T65MQDTL4 Datasheet
Additional preview pages of the FGHL50T65MQDTL4 datasheet.

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Full PDF Text Transcription

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Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQDTL4 Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.

Published: Oct 2, 2022 |