• Part: FGHL50T65MQDTL4
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 346.78 KB
Download FGHL50T65MQDTL4 Datasheet PDF
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Datasheet Summary

Field Stop Trench IGBT 650 V, 50 A Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co- efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A - 100% of the Parts are Tested for ILM (Note 2) - Smooth and Optimized Switching - Tight Parameter Distribution - RoHS pliant Typical Applications - Solar Inverter - UPS, ESS - PFC, Converters MAXIMUM RATINGS Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES...