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FGHL50T65MQDTL4 IGBT

FGHL50T65MQDTL4 Description

Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQDTL4 Field stop 4th generation mid speed IGBT technology copacked with full rated current diode.Featu.

FGHL50T65MQDTL4 Features

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ. ) @ IC = 50 A
* 100% of the Parts are Tested for ILM (Note 2)

FGHL50T65MQDTL4 Applications

* Solar Inverter
* UPS, ESS
* PFC, Converters MAXIMUM RATINGS Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C @ TC = 100°C IC 80 A

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