FOD817 Description
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4−pin dual in−line package.
FOD817 Key Features
- AC Input Response (FOD814)
- Current Transfer Ratio in Selected Groups
- FOD814: 20-300%
- FOD814A: 50-150%
- FOD817: 50-600%
- FOD817A: 80-160%
- FOD817B: 130-260%
- FOD817C: 200-400%
- FOD817D: 300-600%
- Minimum BVCEO of 70 V Guaranteed