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FOD817A - 4-Pin DIP Phototransistor Optocouplers

This page provides the datasheet information for the FOD817A, a member of the FOD814 4-Pin DIP Phototransistor Optocouplers family.

Datasheet Summary

Description

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4 pin dual in

line package.

Features

  • AC Input Response (FOD814).
  • Current Transfer Ratio in Selected Groups.
  • FOD814: 20.
  • 300%.
  • FOD814A: 50.
  • 150%.
  • FOD817: 50.
  • 600%.
  • FOD817A: 80.
  • 160%.
  • FOD817B: 130.
  • 260%.
  • FOD817C: 200.
  • 400%.
  • FOD817D: 300.
  • 600%.
  • Minimum BVCEO of 70 V Guaranteed.
  • Safety and Regulatory Approvals.
  • UL1577, 5,000 VACRMS for 1 Minute.
  • DIN EN/IEC60747.
  • 5.

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Datasheet preview – FOD817A

Datasheet Details

Part number FOD817A
Manufacturer ON Semiconductor
File Size 383.65 KB
Description 4-Pin DIP Phototransistor Optocouplers
Datasheet download datasheet FOD817A Datasheet
Additional preview pages of the FOD817A datasheet.

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Full PDF Text Transcription

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4-Pin DIP Phototransistor Optocouplers FOD814, FOD817 Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4−pin dual in−line package.
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